0150sc-1250m rev b microsemi reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi..com or contact our factory direct. preliminary specification general description the 0150sc-1250m is a common gate n-channel class ab silicon carbide static induction transistor (sit) capable of providing 1250 watts minimum of rf power from 150 to 160 mhz. the transistor is designed for use in high power amplifiers supporting applications such as vhf weather radar and long range tracking radar. the device is the first in a series of high power silicon carbide transistors from microsemi ppg. case outline 55kt fet (common gate) see outline drawing absolute maximum ratings voltage and current drain-source (v dss ) 250 v gate-source (v gs ) - 1v drain current (idg) 35a temperatures storage temperature -65 to +150 c operating junction temperature +250 c electrical characteristics @ 25 c symbol characteristics test conditions min typ max units i dss1 drain-source leakage current v gs = -15v, v dg = 95v 750 a i gss gate-source leakage current v gs = -20v, v ds = 0v 50 a jc 1 thermal resistance pout=12 50w 0.15 oc/w functional characteristics @ 25 c, vdd = 125v, i dq(avg) = 500 ma, freq = 155 mhz, g pg common gate power gain p out = 1250 w, pulsed 9.0 9.5 db p in input power pulse width = 300us, df = 10% 150 160 w d drain efficiency f = 155 mhz, p out =1250w 60 % load mismatch f = 155 mhz, p out = 1250w 10:1 po +1db power output C higher drive f = 155 mhz, pin = 190 w 1400 w vsg source-gate voltage set for idq(avg) = 500 ma 3.0 10.0 volts dec 2008 0150sc-1250m 1250watts, 125 volts, class ab 150 to 160 mhz silicon carbide sit downloaded from: http:///
0150sc-1250m rev b microsemi reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi..com or contact our factory direct. typical rf performance curve 0150sc-1250m: gain and pout 300us 10% , 125v 0 1 2 3 4 5 6 7 8 9 10 11 12 0 50 100 150 200 250 pin (w) gain (db) 0 200 400 600 800 1000 1200 1400 1600 1800 pout (w) gain pout 0150sc-1250m: pin vs eff 300us 10% , 125v 0.00% 10.00% 20.00% 30.00% 40.00% 50.00% 60.00% 70.00% 80.00% 0 50 100 150 200 250 pin (w) drain eff (%) drain eff 0150sc-1250m downloaded from: http:///
0150sc-1250m rev b microsemi reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi..com or contact our factory direct. test circuit information 0150sc-1250m test circuit component designations and values part description part description c1, c6, c10, c12 2200pf chip capacitor (atc 700b) l1, l4 ferrite coil inductor c2 12pf chip capacitor (atc 100b) z1 71 x 5450 mils (w x l) c3 56pf chip capacitor (atc 100b) z2 71 x 830 mils (w x l) c4, 14 68pf chip capacitor (atc 100b) z3 71 x 435 mils (w x l) c5 100pf chip capacitor (atc 100b) z4, z5 190 x 430 mils (w x l) c7 1000uf 160v electrolytic capacitor z6 71 x 555 mils (w x l) c8, c9 1uf chip capacitor z7 71 x 340 mils (w x l) c11, c15 15pf chip capacitor (atc 100b) z8 71 x 1285 mils (w x l) c13 47pf chip capacitor (atc100b) z9 71 x 1520 mils (w x l) c16 22pf chip capacitor (atc100b) z10 71 x 2810 mils (w x l) pcb rogers 6006, r =6.15, 50mils, 1oz l2, l3 7 turns, 18awg, idia 0.2 note: all z length dimensions include bends 0150sc-1250m source pulser downloaded from: http:///
0150sc-1250m rev b microsemi reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi..com or contact our factory direct. impedance information 0150sc-1250m z s z l typical impedance values frequency (mhz) z s ( ? ) z l ( ? ) 156 0.7 - j0.52 3.7 + j3.8 * v dd = 125v, i dq(avg) = 500ma, p out = 1250w * pulse format: 300s, 10% long term duty factor input matching network output matching network downloaded from: http:///
0150sc-1250m rev b microsemi reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi..com or contact our factory direct. case outline 55 kt fet 0150sc-1250m common gate 1 = drain 2 = gate 3 = source downloaded from: http:///
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